◆ Application

• 4", 5", 6" silicon wafer or glass substrate
• System for semiconductor, display, Micro Electronics
  and opto-electronics

◆ System Configuration (standard)

• Wafer-to-wafer full automatic handling
• Single chamber for etching
• Vacuum loadlock & robot (3-axis)
• Back side Helium cooling with ESC chuck
• Wide range optical emission spectroscope
• Programmable control & GUI by Industrial PC
• Chiller/heat exchanger
• Dry pump with booster, turbo molecular pump

◆ Hardware Specification

• Base Pressure ≤ 5mTorr
• Leak Rate ≤ 5mTorr/min, process chamber
                ≤ 10mTorr/min, L/L chamber
• Cycle test No fail up to 1,000 cycles
• MTBF ＞ 150 hours
• MTTR ＜ 3 hours
• Up time ＞ 85%
• Thruput ＞ 20 wafers/hour (1min processing)

◆ Process Specification

• Process capability up to sub-micron feature size
• Etch rate ＞ 3,000 Å/min , Silicon
                ＞ 2,000 Å/min , LP Nitride
                ＞ 4,000 Å/min , Aluminum
                ＞ 1,500 Å/min , Cr
• Uniformity ≤ ±5 % within wafer
                 ≤ ±3 % wafer to wafer
  

◆ Cost & Technology Competitiveness

• Higher performance with lower price
• Customizing backbone
• Lower CoC & easy maintenance